features low cost diffused junction low leakage low forward voltage drop high current capability mechanical data case:jedec do--41,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.012 ounces,0.34 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v max imum rms v olt age v rms v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1.0a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 400 50 a 5.0 50.0 a 2.5 600 i f(av) 1.0 the plastic material carries u/l recognition 94v-0 400 500 600 350 500 420 280 3. thermal resistance f rom junction to ambient. a 40.0 i r i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. - 55 ----- + 150 - 55 ----- + 150 do - 4 1 maximum ratings and electrical characteristics easily cleaned with alcohol,isopropanol and s im ilar s olvents 20 15 60 ERC38-04 --- erc38-06 erc38 - 04 erc38 - 05 erc38 - 06 h i g h e ff i c i e n c y r e c t i f i e r s v o l t a g e r a n g e: 40 0 --- 60 0 v current: 1.0 a dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes peak forward surge current. reverse voltage,volts fig.5 -- typical forward characteristic fig.4--peak forward surge current amperes average forward rectified current. ambient temperature. instantaneous forward current nu m be r o f c y c l e s a t 60 hz instantaneous forward voltage, volts ERC38-04 -- erc38-06 fig.1--test circuit diagram and reverse recovery time characteristic notes:1. rise time=7ns ma x. input impeda nce=1m .22pf f i g . 3 -- t y p i cal j u nc t i o n c a p a c i t a nce fig.2 --forward derating curve z junction capacitance,pf 2. rise time=10 ns ma x. source impeda nce=50 . s e t t i m e b a se fo r 20 / 3 0 n s / c m 0 . 4 0 0 . 01 0 . 1 1 . 0 10 t j =25 pulse width=300 s 0 . 8 1 . 2 1 . 6 2 . 0 2 . 4 3 . 6 2 . 8 3 . 2 4 0 40 20 60 0 . 6 0 0 . 2 0 . 4 80 1 0 0 1 2 0 1 4 0 0 . 8 1 1 . 2 1 . 4 1 5 0 single phase half wave 60hz resisive or inductive load t j =25 1 2 4 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 erc38-06 ERC38-04---erc38-05 1 0 20 t j =125 8.3ms single half sine-wave 24 10 81 0 0 40 60 80 5 25 30 35 40 20 15 10 (+) pulse g enerato r (no te2) (-) d. u. t. 1 noni n- ducti ve 50 n 1. 10 n1. o sci llo sco pe (note 1) (+) 25vdc (approx) (-) t rr - 1 . 0 a -0.25a 0 +0.5a 1cm diode semiconductor korea www.diode.kr
|
